RJK6025DPE switching equivalent, silicon n channel mos fet high speed power switching.
* Low on-resistance RDS(on) = 13 Ω typ. (at ID =0.4 A, VGS = 10 V, Ta = 25°C)
* Low leakage current
* High speed switching REJ03G1870-0100 Rev.1.00 Dec 08, 20.
such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the .
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